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參數(shù)資料
| 型號： | 2N3999 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SWITCHING SILICON TRANSISTOR |
| 中文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-59 |
| 封裝： | TO-59, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 33K |
| 代理商： | 2N3999 |
Chip Type 2C5154
Geometry 9201
Polarity NPN
Data S heet No. 2C5154
Generic Packaged Parts:
2N4150, 2N51512, 2N5154,
2N5339
Chip type
2C5154
by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N3998, 2N3999,
2N4150
,
2N4150S
,
2N5152
,
2N5152L
,
2N5154
,
2N5154L
, 2N5339
APPLICATIONS:
Designed for medium
power amplifier and switching and wide
band amplifier applications.
Features:
Medium power ratings
Top
Al - 37.5 k min.
Au - 6.5 k nom.
12 mils x 40 mils
12 mils x 30 mils
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
100 mils x 100 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter
BV
CBO
I
CES
I
EBO
h
FE
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10 mA, I
E
= 0
V
CE
= 60 V, I
E
= 0
V
BE
= 4.0 V
C
, I
C
= 0
I
C
= 50 mA dc, V
CE
= 5.0 V
I
C
= 2.5 A dc, V
CE
= 5.0 V
Min
80
---
---
50
70-200
Max
---
1.0
1.0
---
---
Unit
V dc
μA
μA
---
---
Electrical Characteristics
T
A
= 25
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3998 | Chip Type 2C5154 Geometry 9201 Polarity NPN |
| 2N3999 | Chip Type 2C5154 Geometry 9201 Polarity NPN |
| 2N5339 | 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS |
| 2N5405 | SMALL SIGNAL PNP TRANSISTORS IN TO-5 |
| 2N5404 | SMALL SIGNAL PNP TRANSISTORS IN TO-5 |
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| 2N3999SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed |
| 2-N3A(100pcs) | 制造商:JST Manufacturing 功能描述: |
| 2N40 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 400 Volts N-CHANNEL POWER MOSFET |
| 2N40_1109 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 400V N-CHANNEL POWER MOSFET |
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