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參數(shù)資料
| 型號： | 2N3999 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2N3999 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
Base Current
IB
0.5
Adc
Collector Current
IC
5.0
10
(1)
Adc
Total Power Dissipation @ TA = 25
0C (2)
@ TC = 100
0C (3)
PT
2.0
30
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
3.33
0C/W
1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50%
2) Derate linearly 11.4 mW/
0C for TA > 250C
3) Derate linearly 300 mW/
0C for TC > 1000C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
V(BR)CEO
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 Adc
V(BR)CBO
100
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
ICEO
10
Adc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 0
ICES
200
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 8.0 Vdc
IEBO
200
10
ηAdc
Adc
TECHNICAL DATA
2N3996 JAN, JTX, JTXV
2N3997 JAN, JTX, JTXV
2N3998 JAN, JTX, JTXV
2N3999 JAN, JTX, JTXV
Processed per MIL-PRF-19500/374
NPN POWER SWITCHING SILICON TRANSISTOR
TO-111
MIL-PRF
QPL
DEVICES
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