參數(shù)資料
型號(hào): 2N4033CSM4G4
廠商: SEMELAB LTD
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CERAMIC, LCC-4
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 15K
代理商: 2N4033CSM4G4
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCB = -60V
VEB = -5V
IC = -150mA
IB = -15mA
IC = -500mA
IB = -50mA
IC = -150mA
IB = -15mA
IC = -500mA
VCE = -0.5V1
IC = -10mA
IE = -10mA
IC = -100mA
VCE = -5.0V
@-55°C1
IC = -100mAVCE = -5.0V
IC = -100mA
VCE = -5.0V1
IC = -500mA
VCE = -5.0V1
IC = -1.0A
VCE = -5.0V1
VCE = -10V
f = 1MHz
VEB = -0.5V
f = 1MHz
IC = -50mA
VCE = -10V
f = 100MHz
IC = -500mA
IB1=-IB2 = -50mA
-50
-10
-0.15
0.50
-0.9
-1.1
-80
-5.0
40
75
100
300
70
25
20
110
1.5
5.0
100
50
350
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
V(BR)CEO
V(BR)CBO
V(BR)EBO
hFE
Cobo
Cibo
hfe
ton
tf
ts
nA
mA
V
pF
ns
2N4033CSM4
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage1
Base Emitter Saturation Voltage1
Base Emitter on Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
DC Current Gain
Output Capacitance
Input Capacitance
Small Signal Gain
Turn On Time
Fall Time
Storage Time
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
1Pulse test tp = 300ms , d = 1%
TA = 150°C
相關(guān)PDF資料
PDF描述
2N4033G4 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N4033UB 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N4033 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N4029 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N4032 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
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