參數(shù)資料
型號: 2N4125D27Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 3/10頁
文件大?。?/td> 556K
代理商: 2N4125D27Z
2N4125
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 1.0 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
4.0
V
ICBO
Collector-Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter-Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 2.0 mA
VCE = 1.0 V, IC = 50 mA
50
25
150
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 100 kHz
4.5
pF
Cib
Input Capacitance
VBE = 0.5 V, f = 100 kHz
10
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
2.0
200
NF
Noise Figure
VCE = 5.0 V, IC = 100
A,
RS = 1.0 k
,
f = 10Hz to 15.7 kHz,
5.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
相關(guān)PDF資料
PDF描述
2N4126-AMMO 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4126/D74Z-J61Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N4126/D26Z-J61Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N4126-J35Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N4126/D27Z-J60Z 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4125RA 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4125RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4125RLRM 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4125TA 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4125TAR 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2