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參數(shù)資料
| 型號： | 2N4400RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 12/25頁 |
| 文件大?。?/td> | 432K |
| 代理商： | 2N4400RLRA |
2N4400 2N4401
2–28
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4401
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 150 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 500 mAdc, VCE = 2.0 Vdc)
2N4400
2N4401
hFE
20
40
80
50
100
20
40
—
150
300
—
Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
0.4
0.75
Vdc
Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
—
0.95
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4400
2N4401
fT
200
250
—
MHz
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.5
pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
—
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
hie
0.5
1.0
7.5
15
k ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
hfe
20
40
250
500
—
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
td
—
15
ns
Rise Time
( CC
BE
IC = 150 mAdc, IB1 = 15 mAdc)
tr
—
20
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
—
225
ns
Fall Time
( CC
C
IB1 = IB2 = 15 mAdc)
tf
—
30
ns
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
– 2.0 V
< 2.0 ns
0
1.0 to 100
s,
DUTY CYCLE
≈ 2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
s,
DUTY CYCLE
≈ 2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
– 4.0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4400RLRB | 制造商:ON Semiconductor 功能描述: |
| 2N4400TA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TA_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TAR | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TF | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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