參數(shù)資料
型號(hào)： 2N4401
廠商： Rohm CO.,LTD.
英文描述： NPN Medium Power Transistor (Switching)(NPN中等功率晶體管(開關(guān)))
中文描述： npn型中等功率晶體管（開關(guān)）（npn型中等功率晶體管（開關(guān)））
文件頁數(shù)： 1/3頁
文件大小： 80K
代理商： 2N4401
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!
Features
1) BV
CEO
>
40V (I
C
=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
TO-92
-
T93
3000
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
-55~+150
Unit
V
V
V
A
Collector power
dissipation
P
C
0.2
W
C
C
2N4401
UMT4401
SST4401
MMST4401
!
External dimensions
(Units : mm)
UMT4401
SST4401
MMST4401
2N4401
0
~
0.1
0.2Min.
2
±
0
1
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.95 0.95
+
0
0.1
+0.2
+0.1
0.06
0.05
(2)
(1)
(3)
All terminals have the same
dimensions
0~0.1
2
±
0
1
0
~
0
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0.1
+0.2
+0.1
0.06
0.05
(2)
(1)
(3)
All terminals have the same
dimensions
0
~
0.1
(2)
(1)
(3)
0
2
±
0
1
±
0
0.9±0.1
0.2
0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
0
4
±
0
(
2
4.8
±
0.2
3.7
±
0.2
5
0.45
±
0.1
2.3
0.5
±
0.1.
2.5+0.3
0.1
(1)
(2)
(3)
All terminals have the same
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
60
40
6
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.4
Unit
V
V
V
μ
A
μ
A
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
I
C
=
100
μ
A
I
C
=
1mA
I
E
=
100
μ
A
V
CB
=
35V
V
EB
=
5V
I
C
/I
B
=
150mA/15mA
-
-
-
1.2
-
Base-emitter saturation voltage
V
BE(sat)
-
-
0.95
V
-
-
0.75
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
Collector-emitter saturation voltage
V
CE(sat)
V
I
C
/I
B
=
500mA/50mA
V
CE
=
1V, I
C
=
0.1mA
V
CE
=
1V, I
C
=
1mA
V
CE
=
1V, I
C
=
10mA
V
CE
=
1V, I
C
=
150mA
V
CE
=
2V, I
C
=
500mA
V
CE
=
10V, I
E
=-
20mA, f
=
100MHz
V
CB
=
10V, f
=
100kHz
V
EB
=
0.5V, f
=
100kHz
V
CC
=
30V, V
EB(OFF)
=
2V, I
C
=
150mA, I
B1
=
15mA
V
CC
=
30V, V
EB(OFF)
=
2V, I
C
=
150mA, I
B1
=
15mA
V
CC
=
30V, I
C
=
150mA, I
B1
=-
I
B2
=
15mA
V
CC
=
30V, I
C
=
150mA, I
B1
=-
I
B2
=
15mA
40
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
300
DC current transfer ratio
h
FE
80
-
-
-
40
-
-
20
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
6.5
30
15
20
225
30
MHz
pF
pF
ns
ns
ns
ns
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