參數(shù)資料
型號(hào): 2N4401J18Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁(yè)數(shù): 10/16頁(yè)
文件大?。?/td> 527K
代理商: 2N4401J18Z
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
IC
A
L
P
U
L
S
E
D
C
U
R
E
N
T
GA
IN
C
FE
125 °C
25 °C
- 40 °C
V
= 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
110
100
500
0.1
0.2
0.3
0.4
I
- COLLECTOR CURRENT (mA)
V
-
COL
L
E
C
TO
R-
E
M
IT
T
E
R
VOL
T
A
G
E
(
V
)
CE
S
A
T
25 °C
C
β = 10
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
B
A
SE-
E
M
ITTER
VO
L
T
A
G
E
(V
)
BE
S
A
T
C
β = 10
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
BA
S
E
-E
M
IT
T
E
R
ON
V
O
L
T
AG
E
(
V
)
BE
(O
N
)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
E
CT
OR
C
U
R
EN
T
(n
A)
A
V
= 40V
CB
O
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
f = 1 MHz
C ob
C
NPN General Purpose Amplifier
te
(continued)
2N440
1
/
MM
B
T
440
1
相關(guān)PDF資料
PDF描述
2N4401D27Z 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4400 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4123 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4401-J61Z 制造商:Texas Instruments 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N4401L-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
2N4401L-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
2N4401NLBU 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4401NSC 制造商:National Semiconductor 功能描述:2N4401