參數(shù)資料
型號(hào): 2N4416AC1D-JQRS.XRAY
廠商: SEMELAB LTD
元件分類(lèi): 小信號(hào)晶體管
英文描述: 35 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: HERMETIC SEALED PACKAGE-3
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 568K
代理商: 2N4416AC1D-JQRS.XRAY
SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4416AC1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8384
Issue 1
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)GSS
Gate – Source
Breakdown Voltage
VDS = 0
IG = -1.0A
-35
VGS(off)
Gate – Source
Cut-off Voltage
VDS = 15V
ID = 1.0nA
-2.5
-6
VGS
Gate – Source Voltage
VDS = 15V
ID = 0.5mA
-1.0
-5.5
V
IDSS
(1)
Saturation
Drain Current
VDS = 15V
VGS = 0
5
15
mA
VDS = 0
VGS = -20V
-100
pA
IGSS
Gate Reverse Current
TA = 150°C
-100
nA
IG
Gate Operating Current
VDG = 10V
ID = 1.0mA
-20
ID(off)
Drain Cut-off Current
VDS = 10V
VGS = -10V
2
pA
VGS(F)
Gate – Source
Forward Voltage
VDS = 0
IG = 1.0mA
1.0
V
RDS(on)
Drain – Source
On Resistance
VGS = 0
ID = 1.0mA
150
DYNAMIC CHARACTERISTICS
gfs
(1)
Common – Source
Forward Transconductance
4.5
7.5
mS
gos
(1)
Common – Source
Output Transconductance
VDS = 15V
f = 1.0KHz
VGS = 0
50
S
Ciss
Common – Source
Input Capacitance
4
Coss
Common – Source
Output Capacitance
2
Crss
Common – Source Reverse
Transfer Capacitance
VDS = 15V
f = 1.0MHz
VGS = 0
1.2
pF
biss
(2)
Common – Source
Input Susceptance
2.5
giss
(2)
Common – Source
Input Conductance
0.3
boss
(2)
Common – Source
Output Susceptance
1.0
mS
goss
(2)
Common – Source
Output Conductance
VDS = 15V
f = 100MHz
VGS = 0
75
S
Gpe
(2)
Common – Source Insertion
Power Gain
18
NF
(2)
Noise Figure
VDS = 15V
f = 100MHz
ID = 5mA
RG = 1.0K
2
dB
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
(2)
By design only, not a production test.
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