參數(shù)資料
型號(hào)： 2N4869A
廠商： InterFET Corporation
英文描述： N-Channel Silicon Junction Field-Effect Transistor
中文描述： N溝道硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 63K
代理商： 2N4869A
01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
50 mA
300mW
1.7 mW/°C
– 65°C to + 200°C
TOD72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
2N4867
2N4867A
2N4868
2N4868A
2N4869
2N4869A
At 25°C free air temperature:
Static Electrical Characteristics
Process NJ16
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 40
– 40
– 40
V
nA
μA
V
mA
I
G
= – 1μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 20V, I
D
= 1 μA
V
DS
= 20V, V
GS
= V
Gate Reverse Current
I
GSS
– 0.25
– 0.25
– 2
1.2
– 0.25
– 0.25
– 3
3
– 0.25
– 0.25
– 5
7.5
T
A
= 150°C
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 0.7
0.4
– 1
1
– 1.8
2.5
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
fs
700
2000
1000
3000
1300
4000
μS
V
DS
= 20V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
Common Source Input Capacitance
g
os
C
iss
1.5
25
4
25
10
25
μS
pF
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
f = 1 kHz
f = 1 MHz
Common Source Reverse
Transfer Capacitance
C
rss
5
5
5
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
ˉ
N
20
10
20
10
20
10
nV/
√
HZ
nV/
√
HZ
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
(2N4867, 68, 69)
R
G
= 20 k
(2N4867A, 68A, 69A)
R
G
= 5 k
f = 10 Hz
f = 1 kHz
f = 1 kHz
Noise Figure
NF
1
1
1
dB
￥ Audio Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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