參數(shù)資料
型號(hào): 2N4911
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 功率晶體管
英文描述: 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
封裝: TO-66, 2 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 136K
代理商: 2N4911
NPN POWER SILICON TRANSISTOR
2N4911
ON CHARACTERISTICS
DC Current Gain
IC = 50 Adc, VCE = 1.0 Vdc
IC = .5 Adc, VCE = 1.0 Vdc
hFE
40
20
100
Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.6
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
CHARACTERISTICS
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = .25 Adc, VCE = 10 Vdc, f = 1.0 kHz
hfe
25
MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 kHz
Cob
100
pF
(1) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2.0%
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
102303
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