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參數(shù)資料
| 型號： | 2N5096E4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 450 V, PNP, Si, POWER TRANSISTOR, TO-205AA |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | 2N5096E4 |
2N5096
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4058
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVCEO*
Collector Emitter Breakdown Voltage
IC=50mA
450
BVCER*
Collector Emitter Breakdown Voltage
IC=100A
RBE = 1K
500
BVCBO
Collector Base Breakdown Voltage
IC=100A
500
BVEBO
Emitter Base Breakdown Voltage
IE=20A
6
V
ICBO
Collector Cutoff Current
VCB=500V
500
IEBO
Emitter Cutoff Current
VEB=4V
250
nA
hFE*
DC Current Gain
IC=1mA
VCE=10V
20
200
IC=25mA
VCE=10V
40
250
IC=100mA
VCE=15V
20
200
VCE(SAT)*
Collector Emitter Saturation Voltage
IC=25mA
IB=2.5mA
3.0
VBE(SAT)*
Base Emitter Saturation Voltage
IC=25mA
IB=2.5mA
1.0
V
IC=10mA
VCE =20V
fT
Current Gain Bandwidth Product
f=5MHz
20
MHz
SWITCHING TIMES (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td
Delay Time
700
tr
Rise Time
1500
ns
ts
Storage Time
3
S
tf
Fall Time
VCC=150V
IC=100mA
IB1=IB2=10mA
200
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
* Pulsed: Pulse Duration = 300s, duty cycle = 1.5%
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