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參數(shù)資料
| 型號： | 2N5109UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Chip Type 2C5109 Geometry 1007 Polarity NPN |
| 中文描述： | 片式2C5109幾何1007極性npn型 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2N5109UB |
Data S heet No. 2N5109
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 100 μA
Collector-Emitter Breakdown Voltage
I
C
= 5 mA
Collector-Emitter Breakdown Voltage
I
C
= 5 mA, R
2
= 10 ohms
Emitter-Base Breakdown Voltage
I
E
= 100 μA
Collector-Emitter Cutoff Current
V
CE
= 15 V
Collector-Emitter Cutoff Current
V
CE
= 15 V, T
C
= +175
o
C
Symbol
Min
Max
Unit
V
(BR)CER
40
---
V
I
CEO2
---
5.0
mA
I
CEO1
---
20
μA
V
V
(BR)EBO
3.0
---
V
(BR)CEO
20
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
40
---
V
ON Characteristics
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 15 V (pulsed)
I
C
= 50 mA, V
CE
= 5.0 V (pulsed)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 50 mA (pulsed)
Symbol
Min
Max
Unit
h
FE1
h
FE2
40
15
150
---
---
---
V
CE(sat)1
---
0.5
V dc
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Current Transfer Ratio
I
C
= 25 mA, V
CE
= 15 V, f = 200 MHz
I
C
= 25 mA, V
CE
= 15 V, f = 200 MHz
I
C
= 25 mA, V
CE
= 15 V, f = 200 MHz
Open Circuit Output Capacitance
V
CB
= 28 V, I
E
= 0, 100 kHz < f < 1 MHz
Power Gain (Narrow Band) Current
V
CC
= 15 V, I
C
= 50 mA, f = 200 MHz
Cross Modulation
V
CC
= 15 V, I
C
= 50 mA, f = 200 MHz
54 dBm V outpuot
Noise Figure
V
CC
= 15 V, I
C
= 50 mA, f = 200 MHz
Voltage Gain (Wideband)
V
CC
= 15 V, I
C
= 50 mA, f = 50 to 216 MHz
Symbol
Min
Max
Unit
5.0
6.0
5.0
10
11
10.5
---
---
---
|hFE|
pF
C
OBO
---
3.5
G
PE
11
3.5
dB
cm
---
-57
dB
NF
---
3.5
dB
G
VE
11
---
dB
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