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參數(shù)資料
| 型號： | 2N5114JAN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFETs |
| 中文描述： | P溝道JFET的 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2N5114JAN |
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70261
S-04030
—
Rev. E, 04-Jun-01
Limits
2N5114
2N5115
2N5116
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1 A , V
DS
= 0 V
45
30
30
30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
=
–
15 V, I
D
=
–
1 nA
5
10
3
6
1
4
V
DS
=
–
18 V
–
30
–
90
Saturation Drain Current
b
I
DSS
V
GS
= 0 V
V
DS
=
–
15 V
–
15
–
60
–
5
–
25
mA
V
GS
= 20 V, V
DS
= 0 V
5
500
500
500
pA
Gate Reverse Current
I
GSS
T
A
= 150 C
0.01
1
1
1
A
Gate Operating Current
c
I
G
V
DG
=
–
15 V, I
D
=
–
1 mA
–
5
V
GS
= 12 V
–
10
–
500
V
=
–
15 V
DS
V
GS
= 7 V
–
10
–
500
pA
V
GS
= 5 V
–
10
–
500
Drain Cutoff Current
I
D(off)
V
GS
= 12 V
–
0.02
–
1
V
=
–
15 V
T = 150 C
V
GS
= 7 V
–
0.02
–
1
A
V
GS
= 5 V
–
0.02
–
1
I
D
=
–
15 mA
–
1.0
–
1.3
Drain-Source On-Voltage
V
DS(on)
V
= 0 V
GS
I
D
=
–
7 mA
–
0.7
–
0.8
V
I
D
=
–
3 mA
–
0.5
–
0.6
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
=
–
1 mA
75
100
150
Gate-Source Forward Voltage
V
GS(F)
I
G
=
–
1 mA , V
DS
= 0 V
–
0.7
–
1
–
1
–
1
V
Dynamic
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
75
100
175
Common-Source
Input Capacitance
C
iss
V
DS
=
–
15 V, V
GS
= 0 V
f = 1 MHz
20
25
25
27
V
GS
= 12 V
5
7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
V
= 0 V
f = 1 MHz
V
GS
= 7 V
6
7
V
GS
= 5 V
6
7
Switching
t
d(on)
6
10
25
Turn-On Time
t
r
10
20
35
t
d(off)
See Switching Circuit
6
8
20
ns
Turn-Off Time
t
f
15
30
60
Notes
a.
b.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
PSCIA
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