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參數(shù)資料
| 型號(hào)： | 2N5116 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | 2N5116 |
01/99
2N5114, 2N5115, 2N5116
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
500mW
Power Derating
3 mW/°C
Storage Temperature Range
– 65°C to + 200°C
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
At 25°C free air temperature:
2N5114
2N5115
2N5116
Static Electrical Characteristics
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
30
V
IG = – 1A, VDS = V
Gate Reverse Current
IGSS
500
pA
VGS = 20V, VDS = V
111
A
VGS = 20V, VDS = V
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
5
10
3614
V
VDS = – 15V, IG = – 1 nA
Gate Source Forward Voltage
VGS(F)
– 1– 1– 1
V
VDS = V, IG = – 1 mA
Drain Saturation Current (Pulsed)
IDSS
– 30
– 90
mA
VGS = V, VDS = – 18V
– 15
– 60
– 5
– 25
mA
VGS = V, VDS = – 15V
– 500
pA
VDS = – 15V, VGS = 12 V
– 1
A
VDS = – 15V, VGS = 12 V
TA = 150°C
Drain Cutoff Current
ID(OFF)
– 500
pA
VDS = – 15V, VGS = 7V
– 1
A
VDS = – 15V, VGS = 7V
TA = 150°C
– 500
pA
VDS = – 15V, VGS = 5V
– 1
A
VDS = – 15V, VGS = 5V
TA = 150°C
– 1.3
V
VGS = V, ID = – 15 mA
Drain Source ON Voltage
VDS(ON)
– 0.8
V
VGS = V, ID = – 7 mA
– 0.6
V
VGS = V, ID = – 3 mA
Static Drain Source ON Resistance
rDS(ON)
75
100
150
VGS = V, ID = – 1 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
75
100
150
VGS = V, ID = A
f = 1 kHz
Common Source Input Capacitance
Ciss
25
27
pF
VDS =– 15V, VGS = V
f = 1 MHz
Common Source Reverse
7pF
VDS = V, VGS = 12V
f = 1 MHz
Transfer Capacitance
Crss
7pF
VDS = V, VGS = 7 V
f = 1 MHz
7pF
VDS = V, VGS = 5V
f = 1 MHz
Switching Characteristics
2N5114 2N5115 2N5116
Turn ON Delay Time
td(on)
610
25
ns
VDD
– 10
– 6
V
Rise Time
tr
10
20
35
ns
VGG
20
12
8
V
Turn OFF Delay Time
td(off)
68
20
ns
RL
130
910
2000
Fall Time
tf
15
30
60
ns
RG
100
220
390
ID(ON)
– 15
– 7
– 3
mA
Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Databook.fxp
1/14/99 11:31 AM
Page B-19
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5116_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET |
| 2N5116-E3 | 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5116JAN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel JFETs |
| 2N5116JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans JFET P-CH 3-Pin TO-206AA 制造商:Vishay Siliconix 功能描述:TRANS JFET P-CH 3PIN TO-206AA - Bulk |
| 2N5116JANTX | 制造商:Vishay Siliconix 功能描述:P CHANNEL JFET, 30V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-5mA; Zero Gate Voltage Drain Current Idss Max:-25mA; Gate-Source Cutoff Voltage Vgs(off) Max:4V; No. of Pins:3 ;RoHS Compliant: No |
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