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參數(shù)資料
| 型號： | 2N5153ESY |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-257AA |
| 封裝： | ROHS COMPLIANT, TO-257, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 200K |
| 代理商： | 2N5153ESY |
2N5153HR
Electrical characteristics
Doc ID 15386 Rev 2
3/10
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 5.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off
current (IE = 0)
VCB = - 60 V
Tamb = 150 °C
-1
-10
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = - 4 V
VEB = - 5.5 V
-1
A
mA
ICEO
Collector cut-off
current (IB = 0)
VCE = - 40 V
-50
A
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 1.5%
Collector-emitter
breakdown voltage
(IB = 0)
IC = - 100 mA
-80
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = - 5 A
IB = - 0.5 A
-1.5
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = - 2.5 A
IB = - 0.25 A
IC = - 5 A
IB = - 0.5 A
-1.45
-2.2
V
hFE
(1)
DC current gain
IC = - 50 mA
VCE = - 5 V
IC = - 2.5 A
VCE = - 5 V
IC = - 5 A
VCE = - 5 V
IC = - 2.5 A
VCE = - 5 V
Tamb = - 55 °C
50
70
40
35
200
hfe
AC forward current
transfer ratio
VCE = - 5 V
IC = - 500 mA
f = 20 MHz
3.5
COBO
Output capacitance
IE = 0
VCB = - 10 V
f = 1 MHz
250
pF
ton
Turn-on time
VCC = - 30 V
VBB = - 4 V
Vin
- 51 V
IC = 5 A
IB1 = - IB2 = - 0.5 A
0.5
s
toff
Turn-off time
VCC = - 30 V
VBB = - 4 V
Vin
- 51 V
IC = - 5 A
IB1 = - IB2 = - 0.5 A
1.3
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5153HR | 制造商:STMicroelectronics 功能描述: |
| 2N5153JANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39 |
| 2N5153JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39 |
| 2N5153JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 2A 3-Pin TO-39 |
| 2N5153L | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
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