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參數(shù)資料
| 型號(hào)： | 2N5194 |
| 廠(chǎng)商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | 2N5194 |
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2N5194 Information
Category Transistors
2N5194 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 4.0
Absolute Max. Power Diss. (W) : 40
Maxim um Operating Tem p (шC) : 140х
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 25
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 1.5
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 2.0M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-126var
Mounting Style : T
Description :
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PDF描述 |
|---|---|
| 2N5195 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N5210/D10Z | 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5961/D28Z | 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5961/D11Z | 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5089/D89Z | 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5194/D | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Silicon PNP Power Transistors |
| 2N5194_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Silicon PNP Power Transistors |
| 2N5194G | 功能描述:兩極晶體管 - BJT 4A 60V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5194G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| 2N5195 | 功能描述:兩極晶體管 - BJT PNP Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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