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參數(shù)資料
| 型號： | 2N5338X |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RES ARRAY 10 OHM 8TRM 4RES SMD |
| 中文描述： | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N5338X |
Parameter
Collector Cut Off Current
Test Conditions
I
E
= 0
V
BE
= 1.5V
Min.
Typ.
Max.
10
10
1
100
100
0.7
1.2
1.2
1.8
Unit
μA
μA
mA
μA
V
V
V
—
MHz
pF
ns
m
s
ns
R
thj-case
R
thj-amb
29.2
175
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
60
60
40
30
240
250
200
2.5
200
2N5338X
2N5339X
LA B
S E M E
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CBO
I
CEX
I
CEO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
h
FE*
f
T
C
CBO
t
on
t
s
t
f
Collector Cut Off Current
Collector Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Turn-on Time
Storage Time
Fall Time
V
CB
= 100V
V
CE
= 90V
Tcase= 150°C
V
CE
= 90V
I
C
= 50mA
I
B
= 0.2A
I
B
= 0.5A
I
B
= 0.2A
I
B
= 0.5A
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
V
CB
= 10V
I
B
= 0
I
B
= 0
I
C
= 2A
I
C
= 5A
I
C
= 2A
I
C
= 5A
I
C
= 0.5A
I
C
= 2A
I
C
= 5A
I
C
=0.5mA
I
E
= 0
f = 0.1MHz
I
C
= 2A
I
B1
= 0.2mA
I
C
= 2A
I
B1
= - I
B2
= 0.2A
V
CC
= 40V
V
CC
= 40V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
m
s , Duty Cycle 1.5%
THERMAL DATA
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| 2N5339_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5339JANTX | 制造商:Microsemi Corporation 功能描述: |
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