參數(shù)資料
型號(hào)： 2N5398
廠商： InterFET Corporation
英文描述： N-Channel Silicon Junction Field-Effect Transistor
中文描述： N溝道硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 91K
代理商： 2N5398
B-20
01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
￥ Low-Noise
￥ High Power Gain
￥ High Transconductance
￥ Mixers
￥ Oscillators
￥ VHF Amplifiers
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Drain Source Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
25 V
10 mA
300 mW
1.7 mW/°C
TOD72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
At 25°C free air temperature:
2N5397
2N5398
Process NJ26L
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Source Forward Voltage
V
(BR)GSS
V
GS(F)
– 25
– 25
V
V
nA
μA
V
mA
I
G
= – 1 μA, V
DS
= V
I
G
= 1 mA, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= V
1
1
Gate Reverse Current
I
GSS
– 0.1
– 0.1
– 6
30
– 0.1
– 0.1
– 6
40
T
A
= 150°C
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 1
10
– 1
5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
5.5
9
5
10
mS
V
DG
= 10V, I
D
= 10 mA
f = 450 MHz
Common Source
Forward Transfer Admittance
|Y
fs
|
6
10
5.5
10
mS
V
DS
= 10V, I
D
= 10 mA
f = 1 kHz
Common Source Output Conductance
Common Source Input Admittance
Common Source Input Conductance
Common Source Input Capacitance
|g
os
|
|Y
os
|
g
is
C
iss
0.4
0.2
2
5
0.5
0.4
3
5.5
mS
mS
mS
pF
V
DG
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DG
= 10V, I
D
= 10 mA
V
DG
= 15V, V
GS
= V
f = 450 MHz
f = 1 kHz
f = 450 MHz
f = 1 kHz
Common Source
Reverse Transfer Capacitance
C
rss
1.2
1.3
pF
V
DG
= 15V, V
GS
= V
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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