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參數(shù)資料
| 型號： | 2N5428AR1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 18K |
| 代理商： | 2N5428AR1 |
BVCEO (sus)
Collector - Emitter
sustaining voltage
ICBO
Collector cutoff current
ICBO
Collector cutoff current
IEBO
Emitter cutoff current
80
-
V
-
100
mA
-10
mA
-1.0
mA
10
mA
100
mA
Min
Max
Unit
OFF CHARACTERISTICS
Parameter
Test Conditions
ICEX
Collector cutoff current
IC = 50mA , IB = 0
VCE = 75V , IB = 0
VCE = 75V , VEB(off) = 1.5V
VCE = 75V , VEB(off) = 1.5V , TC = 150°C
VCB = Rated VCB ' IE = 0
VBE = 6V, IC = 0
hFE
DC Current gain (1)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
60
-
30
120
30
0.7
1.2
2.0
ON CHARACTERISTICS
—
V
IC = 500mA , VCE = 2V
IC = 2A , VCE = 2V
IC = 5A , VCE = 2V
IC = 2A , IB = 0.2A
IC = 7A , IB = 0.7A
IC = 2A , IB = 0.2A
IC = 7A , IB = 0.7A
Min
Max
Unit
Parameter
Test Conditions
VCE(sat)
VBE(sat)
Current gain
bandwidth product
Cob
Output capacitance
Cib
Input capacitance
30
-
MHz
-
250
pF
-
1000
pF
DYNAMIC CHARACTERISTICS
(IC = 500 mA, VCE = 10V, f = 10 MHz)
(VCB = 10V, IE = 0, f = 100 kHz)
(VBE = 2V, IC = 0, f = 100 kHz)
fT
Parameter
Test Conditions
Min
Max
Unit
td
Delay time
(VCC = 40V, VEB(off) = 3V
tr
Rise time
IC = 2A, IB1 = 200mA)
ts
Storage time
(VCC = 40V, IC = 2A
tf
Fall time
IB1 = IB2 = 200mA)
-
100
ns
-
100
ns
-2.0
ms
-
200
ns
SWITCHING CHARACTERISTICS
Parameter
Test Conditions
Min
Max
Unit
(1) Pulse Test: Pulse width = 300
ms, Duty Cycle = 2.0 %
Prelim. 7/93
2N5428A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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| 2N5429 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 7A 2PIN TO-66 - Bulk |
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| 2N5430 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 7A 2PIN TO-66 - Bulk 制造商:NTE Electronics 功能描述:T-NPN SI- AF PO 制造商:GSI Technology 功能描述: |
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