參數(shù)資料
型號： 2N5430
廠商： MOSPEC SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： POWER TRANSISTORS(7A,40W)
中文描述： 7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
封裝： TO-66, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 15K
代理商： 2N5430
2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Base Current
Total Device Dissipation at T
case
= 25°C
Derate above 25°C
Operating and
Storage Junction Temperature Range
Thermal Resistance, Junction to Case.
T
j
T
stg
R
q
JC
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1
Pin 2
Case
Base
Emitter
Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase= 25°C unless otherwise stated)
2
2
1
1
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0
0
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
1
1
LA B
S E M E
This product is available screened in
accordance with various military specs.
EG.
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
2N5430CECC–QR–B
Prelim. 1/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
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