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2N/SST5484 Series
Vishay Siliconix
Document Number: 70246
S-04028
—
Rev. E, 04-Jun-01
www.vishay.com
7-3
Limits
SST5484
SST5485
SST5486
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
=
–
1 A , V
DS
= 0 V
–
35
–
25
–
25
–
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 10 nA
–
0.3
–
3
–
0.5
–
4
–
2
–
6
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
1
5
4
10
8
20
mA
V
GS
=
–
20 V, V
DS
= 0 V
–
0.002
–
1
–
1
–
1
Gate Reverse Current
I
GSS
T
A
= 100 C
–
0.2
–
200
–
200
–
200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 1 mA
–
20
pA
Gate-Source
Forward Voltage
c
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
V
Dynamic
Common-Source
Forward Transconductance
b
g
fs
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
3
6
3.5
7
4
8
mS
Common-Source
Output Conductance
b
g
os
50
60
75
S
Common-Source
Input Capacitance
C
iss
2.2
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 15 V, V
= 0 V
f = 1 MHz
0.7
pF
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 15 V, V
= 0 V
f = 100 Hz
10
nV
√
Hz
High-Frequency
Common-Source
Transconductance
f = 100 MHz
5.5
Y
fs
f = 400 MHz
5.5
mS
Common-Source
Output Conductance
V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz
45
Y
os
f = 400 MHz
65
S
Common-Source
Input Conductance
f = 100 MHz
0.05
Y
is
f = 400 MHz
0.8
mS
V
DS
= 15 V, I
=
1 mA
f = 100 MHz
20
Common-Source
Power Gain
G
ps
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz
21
f = 400 MHz
13
V
DS
= 15 V, V
= 0 V
R
G
= 1 M
V
DS
= 15 V, I
= 1 mA
R
G
= 1 k
V
DS
= 15 V
I
D
= 4 mA
R
G
= 1 k
, f = 1 kHz
0.3
dB
Noise Figure
NF
, f = 100 MHz
2
f = 100 MHz
1
f = 400 MHz
2.5
Notes
a.
b.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NH