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參數(shù)資料
| 型號(hào)： | 2N5486 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小漏極飽和電流8mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 25V的，最小漏極飽和電流八毫安的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | 2N5486 |
2N/SST5484 Series
Siliconix
P-37410—Rev. D, 04-Jul-94
3
Specifications
a
for SST Series
Limits
SST5484
SST5485
SST5486
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–35
–25
–25
–25
V
Gate-Source Cutoff Voltage
Saturation Drain Current
c
V
GS(off)
I
DSS
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
–0.3
–3
–0.5
–4
–2
–6
1
5
4
10
8
20
mA
Gate Reverse Current
I
GSS
–0.002
–1
–1
–1
nA
T
A
= 100 C
–0.2
–200
–200
–200
Gate Operating Current
d
I
G
V
DG
= 10 V, I
D
= 1 mA
–20
pA
Gate-Source
Forward Voltage
d
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
V
Dynamic
Common-Source
Forward Transconductance
c
g
fs
V
DS
= 15 V, V
= 0 V
f = 1 kHz
3
6
3.5
7
4
8
mS
Common-Source
Output Conductance
c
g
os
GS
50
60
75
S
Common-Source
Input Capacitance
C
iss
2.2
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.7
pF
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
Noise Voltage
d
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
10
nV
√
Hz
High-Frequency
Common-Source
Transconductance
Y
fs
f = 100 MHz
5.5
mS
f = 400 MHz
5.5
Common-Source
Output Conductance
Y
os
V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz
45
S
f = 400 MHz
65
Common-Source
Input Conductance
Y
is
f = 100 MHz
0.05
mS
f = 400 MHz
0.8
Common-Source
Common Source
Power Gain
G
ps
V
DS
= 15 V, I
D
= 1 mA
f = 100 MHz
20
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz
21
f = 400 MHz
13
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 M , f = 1 kHz
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 k , f = 100 MHz
0.3
dB
Noise Figure
NF
2
V
DS
= 15 V
I
D
= 4 mA
R
G
= 1 k
f = 100 MHz
1
f = 400 MHz
2.5
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NH
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| 2N5486_D26Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5486_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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