參數(shù)資料
型號: 2N5545
廠商: Vishay Intertechnology,Inc.
英文描述: Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V,最大柵極工作電流-50pA的雙N溝道結(jié)型場效應管)
中文描述: 單片雙N溝道場效應(最小柵源擊穿電壓- 50V的最大柵極工作電流,50pA的的雙?溝道結(jié)型場效應管)
文件頁數(shù): 2/5頁
文件大?。?/td> 75K
代理商: 2N5545
2N5545/46/47/JANTX/JANTXV
2
Siliconix
P-37514—Rev. B, 25-Jul-94
Specifications
a
Limits
2N5545
2N5546
2N5547
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–57
–50
–50
–50
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.5 nA
–2
–0.5
–4.5
–0.5
–4.5
–0.5
–4.5
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –30 V, V
DS
= 0 V
3
0.5
8
0.5
8
0.5
8
mA
Gate Reverse Current
I
GSS
–10
–100
–100
–100
pA
T
A
= 150 C
–20
–150
–150
–150
nA
Gate Operating Current
I
G
V
DG
= 15 V, I
D
= 200 A
–3
–50
–50
–50
pA
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source Forward
Transconductance
c
g
fs
V
DS
= 15 V, V
= 0 V
f = 1 kHz
2.5
1.5
6.0
1.5
6.0
1.5
6.0
mS
Common-Source
Output Conductance
c
g
os
GS
2
25
25
25
S
Common-Source
Input Capacitance
C
iss
V
DS
= 15 V, V
= 0 V
f = 1 MHz
3.5
6
6
6
pF
Common-Source Reverse
Transfer Capacitance
C
rss
GS
1.3
2
2
2
Equivalent Input
Noise Voltage
e
n
V
DS
= 15 V, I
D
= 200 A
f = 10 Hz
20
180
200
nV
Hz
Noise Figure
NF
R
G
= 1 M
0.1
3.5
5
dB
Matching
Differential
Gate-Source Voltage
V
DG
= 15 V, I
D
= 50 A
5
10
15
mV
V
DG
= 15 V, I
D
= 200 A
5
10
15
Gate-Source Voltage
Differential Change
with Temperature
|V
GS1
– V
GS2
|
T
V
DG
= 15 V, I
D
= 200 A
T
A
= –55 to 125 C
10
20
40
V/
C
Saturation Drain
Current Ratio
d
V
DS
= 15 V, V
GS
= 0 V
0.98
0.95
1
0.9
1
0.9
1
Transconductance Ratio
d
V
DS
= 15 V, I
D
= 200 A
f = 1 kHz
0.99
0.97
1
0.95
1
0.9
1
Differential Output
Conductance
V
DG
= 15 V, V
GS
= 0 V
f = 1 kHz
0.1
1
2
3
S
Differential Gate Current
V
DG
= 15 V, I
D
= 200 A
T
A
= 125 C
1
5
5
5
nA
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
Assumes smaller value in the numerator.
NQP
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2N5546 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V,最大柵極工作電流-50pA的雙N溝道結(jié)型場效應管)
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