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參數(shù)資料
| 型號(hào)： | 2N5547 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-50pA的雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | 單片雙N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 50V的最大柵極工作電流，50pA的的雙?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2N5547 |
2N5545/46/47/JANTX/JANTXV
4
Siliconix
P-37514—Rev. B, 25-Jul-94
Typical Characteristics (Cont’d)
0.01
0.1
1
10
1
0
–1.5
–1.0
–0.5
–2.0
–2.5
4
3
2
1
0
0.01
0.1
1
130
120
80
110
100
90
0.01
0.1
1
100
10
1
100
5
0.1
1
0.01
100
80
60
40
20
0
Transfer Characteristics
Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
(
V
G
V
G
–
C
A
V
–
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
2N5545
T
A
= –55 C
125 C
V
GS(off)
= –2 V
V
DG
= 15 V
T
A
= 25 C
5 – 10 V
V
GS(off)
= –3 V
–
I
D
Circuit Voltage Gain vs. Drain Current
2N5547
2N5545
2N5547
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
0.01
0.1
1
1 k
800
600
400
200
0
V
GS(off)
= –2 V
A
V
g
fs
R
L
R
L
g
os
1
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
DS
= 10 V
V
GS(off)
= –2 V
V
GS(off)
= –3 V
25 C
V
(
)
t
V
G
V
G
–
r
D
–
)
V
DG
= 15 V
T
A
= 25 to 125 C
T
A
= –55 to 25 C
V
GS1
V
GS2
–
V
DG
CMRR = 20 log
V
DG
= 10 – 20 V
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| 2N5564 | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 2N5565 | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5547JANTX | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Monolithic N-Channel JFET Duals |
| 2N5547JANTXV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Monolithic N-Channel JFET Duals |
| 2N5547JTX01 | 制造商:Vishay Siliconix 功能描述:19500/430 JANTX2N5547 |
| 2N5547JTX02 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 6PIN TO-71 - Bulk |
| 2N5547JTXL01 | 制造商:Vishay Siliconix 功能描述:19500/430 JANTX2N5547 W/SOLDER DIP |
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