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參數(shù)資料
| 型號(hào)： | 2N5555 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Depletion JFET Switching(N溝道耗盡型結(jié)型場(chǎng)效應(yīng)管開(kāi)關(guān)) |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | 2N5555 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VDG
VGS
IGF
PD
25
Vdc
Drain–Gate Voltage
25
Vdc
Gate–Source Voltage
25
Vdc
Forward Gate Current
10
mAdc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Junction Temperature Range
TJ
Tstg
–65 to +150
°
C
Storage Temperature Range
–65 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10
μ
Adc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current
(VDS = 12 Vdc, VGS = –10 V, TA = 100
°
C)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
V(BR)GSS
IGSS
ID(off)
25
—
Vdc
—
1.0
nAdc
—
—
10
2.0
nAdc
μ
Adc
IDSS
15
—
mAdc
VGS(f)
—
1.0
Vdc
VDS(on)
—
1.5
Vdc
rDS(on)
—
150
Ohms
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
rds(on)
—
150
Ohms
Ciss
—
5.0
pF
Crss
—
1.2
pF
Turn–On Delay Time
(VDD = 10 Vdc, ID(
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
10 Vd ) (S
td(on)
tr
td(off)
tf
—
5.0
ns
Rise Time
)
—
5.0
ns
Turn–Off Delay Time
(VDD = 10 Vdc, ID(
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
10 Vd ) (S
—
15
ns
Fall Time
)
—
10
ns
1. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 3.0%.
Order this document
by 2N5555/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
23
1 DRAIN
2 SOURCE
3
GATE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5555 | CASE 29.04, STYLE 5 TO-92 (TO-226AA) |
| 2N5567 | BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5568 | BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5569 | BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5570 | BIDIRECTIONAL TRIODE THYRISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5555 | 制造商:Fairchild Semiconductor Corporation 功能描述:JFET |
| 2N5555/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:JFET Switching |
| 2N5555_01 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Switching N-Channel - Depletion |
| 2N5555_D74Z | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5555_Q | 功能描述:JFET N-CH 25V 15mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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