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參數(shù)資料
| 型號： | 2N5566 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-40V，柵極工作電流-3pA的N溝道結(jié)型場效應管) |
| 中文描述： | 匹配N溝道場效應對（最小柵源擊穿電壓- 40V的，柵極工作電流，3pA的N溝道結(jié)型場效應管） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2N5566 |
2N5564/5565/5566
4
Siliconix
P-37406—Rev. C, 25-Jul-94
Typical Characteristics (Cont’d)
40
32
24
16
8
0
0
–0.4
–0.8
–1.2
–1.6
–2
V
DS
= 15 V
–
I
D
V
GS
– Gate-Source Voltage (V)
T
A
= –55 C
25 C
125 C
Transfer Characteristics
14
12
10
8
6
4
2
0
0
4
8
12
16
20
Output Characteristics
V
DS
– Drain-Source Voltage (V)
–
I
D
V
GS(off)
= –1.5 V
V
GS
= 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
–0.6 V
–0.7 V
Output Characteristics
V
DS
– Drain-Source Voltage (V)
–
I
D
5
0
1
0.8
0.6
0.4
0.2
4
3
2
0
1
V
GS(off)
= –1.5 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
–0.6 V
–0.7 V
–0.8 V
–0.9 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
C
f = 1 MHz
V
DS
= 0 V
C
iss
C
rss
0
V
GS
– Gate-Source Voltage (V)
–4
–8
–12
–16
Gate Leakage Current
0
30
–
I
G
T
A
= 125 C
T
A
= 25 C
1 mA
I
GSS
@ 25 C
I
D
= 10 mA
Common-Gate Input Admittance
100
10
1
0.1
100
1000
200
500
(
g
ig
b
ig
V
DG
= 15 V
I
D
= 10 mA
T
A
= 25 C
V
DG
– Drain-Gate Voltage (V)
f – Frequency (MHz)
I
GSS
@ 25 C
10 mA
1 mA
6
12
18
24
I
G(on)
@ I
D
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
–0.1 V
V
GS(off)
= –2 V
V
GS
= 0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5566-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 6PIN TO-71 - Bulk |
| 2N5566-E3 | 功能描述:JFET 40V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5567 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TRIACS BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5568 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BIDIRECTIONAL TRIODE THYRISTORS |
| 2N5569 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BIDIRECTIONAL TRIODE THYRISTORS |
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