參數(shù)資料
型號: 2N5631
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: POWER TRANSISTORS COMPLEMENTARY SILICON
中文描述: 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 118K
代理商: 2N5631
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
High Collector Emitter Sustaining Voltage –
V
CEO(sus)
= 140 Vdc
High DC Current Gain – @ I
C
= 8.0 Adc
h
FE
= 15 (Min)
Low Collector–Emitter Saturation Voltage –
V
= 1.0 Vdc (Max) @ I
= 10 Adc
(1) Indicates JEDEC Registered Data.
I
C
B
Collector–Base Voltage
140
Vdc
Collector Current – Continuous
16
Adc
Derate above 25 C
T
, T
–65 to +200
1.14
C
W/ C
Watts
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
JC
0.875
C/W
200
00
20
40
60
80
100
120
140
200
Figure 1. Power Derating
T
C
, TEMPERATURE (
°
C)
150
100
50
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
P
160
180
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Publication Order Number:
2N5631/D
2N5631
PNP
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
NPN
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2N5631/D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors
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