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參數(shù)資料
| 型號： | 2N5661 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N5661 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 454
Devices
Qualified Level
2N5660
2N5661
2N5662
2N5663
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N5660
2N5662
200
250
250
2N5661
2N5663
300
400
400
6.0
0.5
2.0
2N5662
2N5663
1.0
(2)
15
(4)
-65 to +200
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N5660
2N5661
2.0
(1)
20
(3)
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
@ T
A
= +25
0
C
@ T
C
= +100
0
C
P
T
W
W
0
C
T
J
,
T
stg
Characteristics
Symbol
2N5660
2N5661
5.0
87.5
2N5662
2N5663
6.67
145.8
Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1) Derate linearly 11.4 mW/
0
C for T
A
>+ 25
0
C
2) Derate linearly 5.7 mW/
0
C for T
A
> +25
0
C
3) Derate linearly 200 mW/
0
C for T
C
> +100
0
C
4)
Derate linearly 150 mW/
0
C for T
C
> +100
0
C
R
θ
JC
R
θ
JA
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 100
Emitter-Base Breakdown Voltage
I
E
= 10
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5660, 2N5662
2N5661, 2N5663
V
(BR)
CEO
200
300
250
400
6.0
Vdc
2N5660, 2N5662
2N5661, 2N5663
V
(BR)
CER
Vdc
V
(BR)
EBO
Vdc
120101
Page 1 of 2
TO-66*
(TO-213AA)
2N5660, 2N5661
TO-5*
2N5662, 2N5663
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| 2N5667S | NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5661JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 |
| 2N5661U3 | 制造商:Microsemi Corporation 功能描述:2N5661U3 - Bulk |
| 2N5662 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 2A 3PIN TO-5 - Bulk 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR TO-5 LAW - Bulk |
| 2N5663 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N5663_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON POWER NPN TRANSISTOR |
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