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參數(shù)資料
| 型號： | 2N5667 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 33K |
| 代理商： | 2N5667 |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803
Page 2 of 2
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Collector-Base Cutoff Current
VCB = 200 Vdc
2N5664, 2N5666, S
VCB = 250 Vdc
VCB = 300 Vdc
2N5665, 2N5667, S
VCB = 400 Vdc
ICBO
0.1
1.0
0.1
1.0
Adc
mAdc
Adc
mAdc
ON CHARACTERISTICS
(5)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 2.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 1.0 Adc, VCE = 5.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 3.0 Adc, VCE = 5.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 5.0 Adc, VCE = 5.0 Vdc
All Types
hFE
40
25
40
25
15
10
5.0
120
75
Collector-Emitter Saturation Voltage
IC = 3.0 Adc, IB = 0.3 Adc
2N5664, 2N5666, S
IC = 3.0 Adc, IB = 0.6 Adc
2N5665, 2N5667, S
IC = 5.0 Adc, IB = 1.0 Adc
All Types
VCE(sat)
0.4
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 3.0 Adc, IB = 0.3 Adc
2N5664, 2N5666, S
IC = 3.0 Adc, IB = 0.6 Adc
2N5665, 2N5667, S
IC = 5.0 Adc, IB = 1.0 Adc
All Types
VBE(sat)
1.2
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 5.0 Vdc, f = 10 MHz
h
fe
2.0
7.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 100 Vdc; IC = 1.0 Adc; IB1 = 30 mAdc
ton
0.25
s
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc;
2N5664, 2N5666, S
IB1 = -IB2 = 50 mAdc
2N5665, 2N5667, S
toff
1.5
2.0
s
SAFE OPERATING AREA
DC Tests (2N5664 and 2N5665 only)
TC = 100
0C, 1 Cycle, t
≥ 1.0 s, t
r + tf = 10 s
Test 1
VCE = 6.0 Vdc, IC = 5.0 Adc
2N5664 and 2N5665
VCE = 3.0 Vdc, IC = 5.0 Adc
2N5666 and 2N5667
Test 2
VCE = 40 Vdc, IC = 0.75 Adc
2N5664 and 2N5665
VCE = 37.5 Vdc, IC = 0.4 Adc
2N5666 and 2N5667
Test 3
VCE = 200 Vdc, IC = 43 mAdc
2N5664
VCE = 200 Vdc, IC = 27 mAdc
2N5666
Test 4
VCE = 300 Vdc, IC = 21 mAdc
2N5665
VCE = 300 Vdc, IC = 14 mAdc
2N5667
(5) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5666S | 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5665 | 5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N5682 | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5679 | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5681 | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5667JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 5A 3-Pin TO-5 |
| 2N5667JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N5667N1 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
| 2N5667S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-39 - Bulk |
| 2N5667SJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON SWITCHING TRANSISTOR |
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