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參數(shù)資料
| 型號： | 2N5672 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2N5672 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N5671
2N5672
Units
Collector-Emitter Voltage
VCEO
90
120
Vdc
Collector-Base Voltage
VCBO
120
150
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
10
Adc
Collector Current
IC
30
Adc
Total Power Dissipation @ TA = 25
0C (1)
@ TC = 25
0C (2)
PT
6.0
140
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.25
0C/W
1)
Derate linearly 34.2 mW/
0C for TA > 250C
2)
Derate linearly 800 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEO
90
120
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CER
110
140
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEX
120
150
Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ICEO
10
mAdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = 1.5 Vdc
2N5671
VCE = 135 Vdc, VBE = 1.5 Vdc
2N5672
ICEX
12
10
mAdc
TECHNICAL DATA
2N5671 JAN, JTX, JTXV
2N5672 JAN, JTX, JTXV
Processed per MIL-PRF-19500/488
NPN HIGH-POWER SILICON TRANSISTOR
TO-3 (TO-204AA)
MIL-PRF
QPL
DEVICES
相關(guān)PDF資料 |
PDF描述 |
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| 2N5672 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5680X | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5680 | 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5681E1 | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N5682-QR-B | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5675 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
| 2N5676 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N5677 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 5A 3PIN TO-61 - Bulk |
| 2N5678 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 10A 3PIN TO-63 - Bulk |
| 2N5679 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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