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參數(shù)資料
| 型號： | 2N5681 |
| 英文描述： | Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶體管（TO-39金屬封裝，用于通用、放大器、開關(guān)電路）) |
| 中文描述： | Expitaxial平面NPN晶體管在電子元件工業(yè)聯(lián)合會- 39金屬外殼（大功率，外延平面npn型晶體管（TO - 39封裝金屬封裝，用于通用，放大器，開關(guān)電路）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N5681 |
Parameter
Test Conditions
I
E
= 0
for 2N5681
for 2N5682
V
BE
= -1.5
for 2N5681
for 2N5682
Tcase= 150°C
for 2N5681
for 2n5682
I
B
= 0
for 2N5681
for 2N5682
I
C
= 0
I
B
= 0
for 2N5681
for 2N5682
I
C
= 250mA
I
C
= 500mA
I
C
= 1A
I
C
= 250mA
I
C
= 250mA
I
C
= 1A
I
C
= 100mA
f = 10MHz
I
E
= 0
f = 1MHz
I
C
= 0.2A
f = 1KHz
Min.
Typ.
Max.
Unit
μA
μA
mA
μA
V
MHz
pF
R
thj-case
R
thj-amb
17.5
175
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
1
1
1
1
1
1
10
10
1
100
120
0.6
1
2
1
150
40
5
30
50
40
2N5681
2N5682
Prelim.3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CBO
I
CEV
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE*
h
FE*
f
T
C
CBO
h
fe
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
V
CB
= 100V
V
CB
= 120V
V
CE
= 100V
V
CE
= 120V
V
CE
= 100V
V
CE
= 120V
V
CE
= 70V
V
CE
= 80V
V
EB
= 4V
I
C
= -10mA
I
B
= 25mA
I
B
= 50mA
I
B
= 200mA
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
V
CB
= 20V
V
CE
= 1.5V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
< 2%
THERMAL DATA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5682 | Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶體管（TO-39金屬封裝，用于通用、放大器、開關(guān)電路）) |
| 2N5681 | SILICON NPN TRANSISTORS |
| 2N5682 | SILICON NPN TRANSISTORS |
| 2N5681 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5682 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5681SMD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N5681SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SMT |
| 2N5682 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5682 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5683 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:-50A; DC Current Gain hFE:15; Operating Temperature Min:-65C ;RoHS Compliant: Yes |
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