參數(shù)資料
型號: 2N5681
廠商: 意法半導體
英文描述: SILICON NPN TRANSISTORS
中文描述: 硅NPN晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 22K
代理商: 2N5681
Parameter
Test Conditions
I
E
= 0
for 2N5681
for 2N5682
V
BE
= -1.5
for 2N5681
for 2N5682
Tcase= 150°C
for 2N5681
for 2n5682
I
B
= 0
for 2N5681
for 2N5682
I
C
= 0
I
B
= 0
for 2N5681
for 2N5682
I
C
= 250mA
I
C
= 500mA
I
C
= 1A
I
C
= 250mA
I
C
= 250mA
I
C
= 1A
I
C
= 100mA
f = 10MHz
I
E
= 0
f = 1MHz
I
C
= 0.2A
f = 1KHz
Min.
Typ.
Max.
Unit
μA
μA
mA
μA
V
MHz
pF
R
thj-case
R
thj-amb
17.5
175
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
1
1
1
1
1
1
10
10
1
100
120
0.6
1
2
1
150
40
5
30
50
40
2N5681
2N5682
Prelim.3/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
CBO
I
CEV
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE*
h
FE*
f
T
C
CBO
h
fe
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
V
CB
= 100V
V
CB
= 120V
V
CE
= 100V
V
CE
= 120V
V
CE
= 100V
V
CE
= 120V
V
CE
= 70V
V
CE
= 80V
V
EB
= 4V
I
C
= -10mA
I
B
= 25mA
I
B
= 50mA
I
B
= 200mA
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
V
CB
= 20V
V
CE
= 1.5V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d
< 2%
THERMAL DATA
相關PDF資料
PDF描述
2N5682 SILICON NPN TRANSISTORS
2N5681 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5682 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5681 Small Signal Transistors
2N5682 Small Signal Transistors
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