參數(shù)資料
型號(hào)： 2N5682
廠商： STMICROELECTRONICS
元件分類： 小信號(hào)晶體管
英文描述： 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁數(shù)： 2/4頁
文件大?。?/td> 46K
代理商： 2N5682
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
17.5
175
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
for 2N5681
VCE = 100 V
for 2N5682
VCE = 120 V
Tc = 150
oC
for 2N5681
VCE = 100 V
for 2N5682
VCE = 120 V
1
A
ICBO
Collector Cut-off
Current (IE = 0)
for 2N5681
VCB = 100 V
for 2N5682
VCB = 120 V
1
A
ICEO
Collector Cut-off
Current (IB = 0)
for 2N5681
VCB = 70 V
for 2N5682
VCB = 80 V
10
A
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 4 V
1
A
VCEO(sus)
Collector-Emitter
Sustaining Voltage
IC = 10 mA
for 2N5681
for 2N5682
100
120
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 250 mA
IB = 25 mA
IC = 500 mA
IB = 50 mA
IC = 1 A
IB = 200 mA
0.6
1
2
V
VBE
Base-Emitter Voltage
IC = 250 mA
VCE = 2 V
1
V
hFE
DC Current Gain
IC = 250 mA
VCE = 2 V
IC = 1 A
VCE = 2 V
40
5
150
hfe
Small Signal Current
Gain
IC = 0.2 A
VCE = 1.5 V
f = 1KHz
40
fT
Transition frequency
IC = 100 mA
VCE = 10 V
f =10MHz
30
MHz
CCBO
Collector Base
Capacitance
IE = 0
VCB = 20 V
f = 1MHz
50
pF
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
2N5681 / 2N5682
2/4
相關(guān)PDF資料
PDF描述
2N5682 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5679 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5679 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5681 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N5682 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5682 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR
2N5683 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:TRANSISTOR PNP -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V 制造商:NTE Electronics 功能描述:TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:-50A; DC Current Gain hFE:15; Operating Temperature Min:-65C ;RoHS Compliant: Yes
2N5684 功能描述:兩極晶體管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5684/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current Complementary Silicon Power Transistors
2N5684_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors
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