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參數(shù)資料
| 型號(hào)： | 2N5781LEADFREE |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 493K |
| 代理商： | 2N5781LEADFREE |
2N5781 PNP
2N5784 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5781 and
2N5784 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCER
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
3.5
A
Continuous Base Current
IB
1.0
A
Power Dissipation
PD
10
W
Power Dissipation (TA=25°C)
PD
1.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
17.5
°C/W
Thermal Resistance
ΘJA
175
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=75V, VBE=1.5V
10
μA
ICEV
VCE=75V, VBE=1.5V, TC=150°C
1.0
mA
ICER
VCE=65V, RBE=100Ω
10
μA
ICER
VCE=65V, RBE=100Ω, TC=150°C
1.0
mA
ICEO
VCE=50V
100
μA
IEBO
VEB=5.0V
10
μA
BVCER
IC=10mA, RBE=100Ω
80
V
BVCEO
IC=10mA
65
V
VCE(SAT)
IC=1.0A, IB=100mA
0.5
V
VBE(ON)
VCE=2.0V, IC=1.0A
1.5
V
hFE
VCE=2.0V, IC=1.0A
20
150
hFE
VCE=2.0V, IC=3.2A
4.0
fT
VCE=2.0V, IC=100mA, f=4.0MHz (2N5781)
8.0
60
MHz
fT
VCE=2.0V, IC=100mA, f=200kHz (2N5784)
1.0
4.0
MHz
hfe
VCE=2.0V, IC=100mA, f=1.0kHz
25
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
0.5
μs
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
5.0
μs
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5781)
2.5
μs
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784)
μs
TO-39 CASE
R1 (25-January 2011)
www.centra lsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5782 | 3.5 A, 65 V, PNP, Si, POWER TRANSISTOR, TO-5 |
| 2N5784 | 3500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5785 | 3.5 A, 65 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 2N5785N1 | POWER TRANSISTOR, TO-276AA |
| 2N5786-JQR-BE1 | 3500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5781XL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N5782 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 50V 3.5A 3PIN TO-5 - Bulk |
| 2N5782L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N5783 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3.5A 3PIN TO-5 - Bulk 制造商:Harris Corporation 功能描述: |
| 2N5783_11 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
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