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參數(shù)資料
| 型號： | 2N5786 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 3500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2N5786 |
Prelim. 8/96
2N5786
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
V
CE
= 40V
R
BE
= 100
W
V
CE
= 45V
R
BE
= 100
W
V
CE
= 25V
V
BE
= -3.5V
V
CE
= 2V
V
CE
= 2V
I
C
= 0.1A
I
C
= 0.1A
V
CE
= 2V
I
C
= 1.6A
I
C
= 3.2A
V
CE
= -2V
f = 200kHz
V
CE
= 2V
f = 1kHz
V
CC
= 30V
I
B1
= I
B2
Min.
Typ.
Max.
10
1
10
1
100
10
100
Unit
m
A
mA
m
A
mA
m
A
m
A
—
V
V
—
—
m
s
°C/W
20
4
40
45
1.5
1
2
5
20
25
5
15
17.5
175
I
CER
Collector Cut-off Current
I
CEX
Collector Cut-off Current
I
CEO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
h
FE*
DC Current Gain
V
CEO(sus)*
V
CER(sus)*
V
BE
V
CE(sat)
Collector – Emitter Sustaining Voltage
1
Collector – Emitter Sustaining Voltage
1
Base – Emitter Voltage
Collector – Emitter Saturation Voltage
2
h
fe
Small Signal Common – Emitter
Current Gain
Small Signal Common – Emitter
Current Gain
Turn-on Time
Turn-off Time
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
h
fe
t
ON
t
OFF
R
q
JC
R
q
JA
T
C
= 150°C
V
BE
= -1.5V
T
C
= 150°C
I
B
= 0
I
C
= 0
I
C
= 1.6A
I
C
= 3.2A
I
B
= 0
R
BE
= 100
W
I
C
= 1.6A
I
B
= 0.16mA
I
B
= 0.8mA
I
C
= 100mA
I
C
= 0.1mA
I
C
= 1A
NOTES
*
1)
2)
3)
Pulse Test: t
p
= 300
m
s,
d
= 1.8%.
These tests MUST NOT be measured on a curve tracer.
Measured
1
/
4
” (6.35 mm) from case. Lead resistance is critical in this test.
Measured at a frequency where
h
fe
is decreasing at approximately 6dB per octave.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
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相關代理商/技術參數(shù) |
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|---|---|
| 2N5786_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR |
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| 2N5794U | 功能描述:兩極晶體管 - BJT Dual NPN Transistor 6 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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