- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31619 > 2N5830L34Z (FAIRCHILD SEMICONDUCTOR CORP) 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N5830L34Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 294K |
| 代理商： | 2N5830L34Z |
2N5830
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100
°C
50
25
nA
A
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
VCE = 5.0 V, IC = 50 mA
60
80
500
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.15
0.2
0.25
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.8
1.0
V
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
0.8
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Output Capacitance
VCB = 10 V, f = 1.0 MHz
4.0
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 100 MHz
1.0
5.0
hie
Input Impedance
IC = 1.0 mA, VCE = 10 V,
6.0
K
hoe
Output Admittance
f = 1.0 kHz
40
mho
hfe
Small-Signal Current Gain
60
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5830J05Z | 200 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N5830 | 300 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5836 | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-46 |
| 2N5875/1 | 15 A, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6260 | 3 A, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5831 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIERS |
| 2N5832 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIERS |
| 2N5833 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIERS |
| 2N5835 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-72 |
| 2N5836 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 200MA I(C) | TO-46 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。