參數(shù)資料
型號(hào)： 2N5877
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： METAL, TO-3, 2 PIN
文件頁(yè)數(shù)： 12/60頁(yè)
文件大小： 377K
代理商： 2N5877
2N5877 2N5878
3–75
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N5877
(IC = 200 mAdc, IB = 0)
2N5878
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N5877
(VCE = 40 Vdc, IB = 0)
2N5878
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5877
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5878
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5877
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N5878
ICEX
—
0.5
5.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5877
(VCB = 80 Vdc, IE = 0)
2N5878
ICBO
—
0.5
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IE = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
35
20
4.0
—
100
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 10 Adc, IB = 2.5 Adc)
VCE(sat)
—
1.0
3.0
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 10 Adc, IB = 2.5 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
4.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
2N5877, 2N5878
Cob
—
300
pF
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
20
—
—
SWITCHING CHARACTERISTICS
Rise Time
(V
30 Vdc I
4 0 Adc I
I
0 4 Adc
tr
—
0.7
s
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc,
See Figure 2)
ts
—
1.0
s
Fall Time
See Figure 2)
tf
—
0.8
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
25
s
0
–11 V
RB
+ 7.0 V
D1
SCOPE
VCC
– 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR CURVES OF FIGURES 3 and 6,
RB and RC ARE VARIED TO OBTAIN
DESIRED CURRENT LEVELS
For PNP test circuit,
reverse all polarities.
7.5
25
+ 9.0 V
Figure 3. Turn–On Time
1.0
0.1
IC, COLLECTOR CURRENT (AMPERES)
0.5
0.2
0.1
0.01
0.2
0.3
0.5 0.7
2.0
10
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.07
t,TIME
(
s)
tr
1.0
0.3
0.7
7.0
0.05
0.03
0.02
3.0
5.0
2N5877, 2N5878 (NPN)
td @ VBE(off) = 5.0 V
相關(guān)PDF資料
PDF描述
2N5881 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6040BA 8 A, 60 V, PNP, Si, POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5878 功能描述:兩極晶體管 - BJT NPN GP Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5879 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 15A 3PIN TO-3 - Bulk 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N588 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-30
2N5880 功能描述:兩極晶體管 - BJT 80V 15A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5881 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 15A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述:
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