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參數(shù)資料
| 型號： | 2N5884 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon High Power Transistors(補償型硅高功率晶體管) |
| 中文描述： | 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 2N5884 |
PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.010.02
0.5
0.2
0.1
0.05
0.02
r
R
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
2000
500
JC
(t) = r(t)
JC
JC
= 0.875
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
1000
0.01
100
1.0
Figure 5. Active–Region Safe Operating Area
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0
3.0
7.0
10
20
30
50
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25
°
C
(SINGLE PULSE)
CURVES APPLY BELOW RATED V
CEO
70
2.0
I
T
J
= 200
°
C
dc
500 s
1ms
1.0
0.5
0.2
5.0
2N5883, 2N5885
2N5884, 2N5886
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
200
°
C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
7.0
0.3
Figure 6. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMPERES)
5.0
3.0
0.7
0.5
0.1
0.5
0.7
1.0
2.0
5.0
10
30
T
J
= 25
°
C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
0.2
t
t
s
3.0
3000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
300
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C
2000
700
500
T
J
= 25
°
C
C
ib
C
ob
1.0
20
1000
7.0
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
t
f
C
ib
C
ob
t
s
t
f
2.0
0.3
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
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| 2N5886 | Complementary Silicon NPN Power Transistor(25A，200W，80V（集電極-發(fā)射極），補償型硅NPN功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5884G | 功能描述:兩極晶體管 - BJT 25A 80V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885 | 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5885G | 功能描述:兩極晶體管 - BJT 25A 60V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5886 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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