參數(shù)資料
型號： 2N5911
廠商： CALOGIC LLC
元件分類： 小信號晶體管
英文描述： Dual N-Channel JFET High Frequency Amplifier
中文描述： 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78
封裝： HERMETIC SEALED PACKAGE-7
文件頁數(shù)： 1/2頁
文件大?。?/td> 24K
代理商： 2N5911
Dual N-Channel JFET
HghFrequency Ampifier
2N5911 /2N5912
FEATURES
Tight Tracking
Low Insertion Loss
Good Matching
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
One Side
367mW
3.0mW/
o
C
Both Sides
500mW
4.0mW/
o
C
Power Dissipation
Derate above 25
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N5911-12
X2N5912
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
I
GSS
Gate Reverse Current
-100
pA
V
GS
= -15V, V
DS
= 0
-250
nA
T
A
= 150
o
C
BV
GSS
Gate Reverse Breakdown Voltage
-25
V
I
G
= -1
μ
A, V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage
-1
-5
V
DS
= 10V, I
D
= 1nA
V
GS
Gate-Source Voltage
-0.3
-4
V
DG
= 10V, I
D
= 5mA
I
G
Gate Operating Current
-100
pA
-100
nA
T
A
= 150
o
C
I
DSS
Saturation Drain Current (Pulsewidth 300
μ
s, duty cycle
≤
3%)
7
40
mA
V
DS
= 10V, V
GS
= 0V
g
fs
Common-Source Forward Transconductance
5000
10,000
μ
S
V
DG
= 10V, I
D
= 5mA
f = 1kHz
g
fs
Common-Source Forward Transconductance (Note 1)
5000
10,000
f = 100MHz
g
os
Common-Source Output Conductance
100
f = 1kHz
g
oss
Common-Source Output Conductance (Note 1)
150
f = 100MHz
C
iss
Common-Source Input Capacitance (Note 1)
5
pF
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance (Note 1)
1.2
e
n
Equivalent Short Circuit Input Noise Voltage (Note 1)
20
nV
√
Hz
f = 10kHz
NF
Spot Noise Figure (Note 1)
1
dB
f = 10kHz
R
G
= 100k
CJ1
相關(guān)PDF資料
PDF描述
2N5911-12 Dual N-Channel JFET High Frequency Amplifier
2N5912 Dual N-Channel JFET High Frequency Amplifier
2N5971 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
2N6227 Bipolar PNP Device
2N6234 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5911_TO-71 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET
2N5911-12 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:Dual N-Channel JFET High Frequency Amplifier
2N5911-2 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 7-Pin TO-78 T/R
2N5911-E3 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5912 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*