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參數(shù)資料
| 型號： | 2N5945 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | 2N5945 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 100 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 2.0 mA
I
CBO
V
CB
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 200 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
UNITS
V
V
V
mA
---
36
4.0
1.0
20
---
---
C
ob
V
CB
= 12.5 V f = 1.0 MHz
---
18
25
pF
P
G
η
c
V
CC
= 12.5 V P
OUT
= 4.0 W f = 470 MHz
9.0
60
10
dB
%
NPN SILICON RF POWER TRANSISTOR
2N5945
DESCRIPTION:
The
ASI 2N5945
is Designed for
FM Land Mobile Applications in the
400 to 960 MHz.
FEATURES:
Common Emitter
P
G
= 9.0 dB at 2.0 W/470 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.8 A
V
CBO
36 V
V
CEO
16 V
V
EBO
4.0 V
P
DISS
15 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
11.6 °C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.285 / 7.24
.137 / 3.48
.007 / 0.18
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
C
B
E
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5946 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS |
| 2N5947 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | STX-8 |
| 2N5949 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-CHANNEL JFETS |
| 2N5950 | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| 2N5950_J18Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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