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參數(shù)資料
| 型號(hào)： | 2N5962 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier(NPN通用放大器) |
| 中文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 2N5962 |
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 5.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 65
°
C
V
EB
= 5.0 V, I
C
= 0
45
45
8.0
V
V
V
nA
nA
nA
2.0
50
1.0
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 10
μ
A
V
CE
= 5.0 V, I
C
= 100
μ
A
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 5.0 V, I
C
= 1.0 mA
450
500
550
600
1400
0.2
0.7
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
0.5
SMALL SIGNAL CHARACTERISTICS
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
C
cb
C
eb
h
fe
V
CB
= 5.0 V
V
EB
= 0.5 V
I
= 10 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
V
CE
= 5.0 V, I
= 10
μ
A,
R
S
= 10 k
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
= 100
μ
A,
R
S
= 1.0 k
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
= 100
μ
A,
R
S
= 10 k
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 100
μ
A,
R
S
= 100 k
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 10
μ
A,
R
S
= 10 k
, f = 10 Hz -10 kHz
B
W
= 15.7 kHz
4.0
6.0
pF
pF
600
1.0
200
NF
Noise Figure
3.0
6.0
4.0
8.0
3.0
dB
dB
dB
dB
dB
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5962 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| 2N5962_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N5962_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5962_D74Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5962_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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