參數(shù)資料
型號： 2N6044BV
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 12/61頁
文件大?。?/td> 418K
代理商： 2N6044BV
2N6040 thru 2N6042 2N6043 thru 2N6045
3–90
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
VCEO(sus)
60
80
100
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6040, 2N6043
(VCE = 80 Vdc, IB = 0)
2N6041, 2N6044
(VCE = 100 Vdc, IB = 0)
2N6042, 2N6045
ICEO
—
20
A
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6040, 2N6043
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6041, 2N6044
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
2N6042, 2N6045
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6040, 2N6043
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6041, 2N6044
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
2N6042, 2N6045
ICEX
—
20
200
A
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N6040, 2N6043
(VCB = 80 Vdc, IE = 0)
2N6041, 2N6044
(VCB = 100 Vdc, IE = 0)
2N6042, 2N6045
ICBO
—
20
A
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
2N6040, 41, 2N6043, 44
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6042, 2N6045
(IC = 8.0 Adc, VCE = 4.0 Vdc)
All Types
hFE
1000
100
20.000
20,000
—
—
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
2N6040, 41, 2N6043, 44
(IC = 3.0 Adc, IB = 12 mAdc)
2N6042, 2N6045
(IC = 8.0 Adc, IB = 80 Adc)
All Types
VCE(sat)
—
2.0
4.0
Vdc
Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
—
4.5
Vdc
Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
—
Output Capacitance
2N6040/2N6042
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6043/2N6045
Cob
—
300
200
pF
Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
300
—
—
* Indicates JEDEC Registered Data.
Figure 2. Switching Times Equivalent Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,TIME
(
s)
2.0
1.0
0.5
0.05
0.2
0.3
0.5 0.7
1.0
2.0 3.0
10
0.3
0.7
tf
tr
ts
td @ VBE(off) = 0 V
V2
approx
+ 8.0 V
V1
approx
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
– 30 V
RC
TUT
≈ 8.0 k ≈ 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
0.2
0.1
0.07
5.0 7.0
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
PNP
NPN
相關PDF資料
PDF描述
2N6045AF 8 A, 100 V, NPN, Si, POWER TRANSISTOR
2N6042DW 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2N6041BV 8 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6045BA 8 A, 100 V, NPN, Si, POWER TRANSISTOR
2N6041BC 8 A, 80 V, PNP, Si, POWER TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
2N6045 功能描述:達林頓晶體管 NPN Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6045G 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6046 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk
2N6047 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-63 - Bulk
2N6048 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 20A 3PIN TO-63 - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*