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參數(shù)資料
| 型號(hào)： | 2N6045G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Complementary Silicon Transistors |
| 中文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | 2N6045G |
PNP 2N6040, 2N6042, NPN 2N6043, 2N6045
http://onsemi.com
2
*Indicates JEDEC Registered Data.
*ELECTRICAL CHARACTERISTICS
(T
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
C
B
60
(V
CE
= 60 Vdc, I
B
= 0)
CE
B
20
Collector Cutoff Current
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc)
(V
= 80 Vdc, V
= 1.5 Vdc, T
= 150
°
C)
CE
BE(off)
C
I
CEX
200
A
Collector Cutoff Current
CB
E
(V
= 100 Vdc, I
= 0)
2N6042, 2N6045
ON CHARACTERISTICS
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
All Types
CollectorEmitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 16 mAdc)
(I
C
= 8.0 Adc, I
B
= 80 Adc)
2N6040, 2N6043,
All Types
V
2.0
4.0
Vdc
BaseEmitter Saturation Voltage (I
C
= 8.0 Adc, I
B
= 80 mAdc)
BaseEmitter On Voltage (I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
CB
E
V
BE(sat)
V
BE(on)
4.5
2.8
Vdc
Vdc
|h
fe
|
4.0
fe
C
CE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6049E | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6046 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk |
| 2N6047 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-63 - Bulk |
| 2N6048 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 20A 3PIN TO-63 - Bulk |
| 2N6049 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 55V 4A 3PIN TO-66 - Bulk |
| 2N6049E | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO66 |
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