參數(shù)資料
型號(hào): 2N6071BT
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225
封裝: CASE 77-09, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 84K
代理商: 2N6071BT
2N6071A/B Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM;
Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM,
I
RRM
10
2
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3)
(I
TM
=
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100 , T
J
= 40
°
C)
Gate NonTrigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100 , T
J
= 110
°
C)
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current =
6.0 A Peak)
V
TM
V
GT
2
V
V
1.4
2.5
V
GD
0.2
V
1 Adc)
T
J
= 40
°
C
T
J
= 25
°
C
I
H
30
15
mA
Turn-On Time (I
TM
= 14 Adc, I
GT
= 100 mAdc)
t
gt
1.5
s
QUADRANT
(Maximum Value)
Type
I
GT
@
T
J
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 )
2N6071A
2N6073A
2N6075A
+25
°
C
5
5
5
10
40
°
C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25
°
C
3
3
3
5
40
°
C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ V
DRM
, T
J
= 85
°
C, Gate Open, I
TM
= 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
5
V/ s
3. Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
*Indicates JEDEC Registered Data.
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
V
EE
V
EE
= 5.0 V
MC7400
4
14
7
+
510
2N6071A
LOAD
115 VAC
60 Hz
相關(guān)PDF資料
PDF描述
2N6071BTG Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6073AG Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6073BG Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6075AG Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6075BG Sensitive Gate Triacs Silicon Bidirectional Thyristors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6071BTG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6072 制造商:Motorola 功能描述:2N6072 MOT N9H1C
2N6072A 制造商:WESTNGHSE 功能描述:300 V, 4 A, TRIAC, TO-126
2N6072B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|300V V(DRM)|4A I(T)RMS|TO-126
2N6073 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PEEK GATE TRIGGER CURRENT