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參數(shù)資料
| 型號： | 2N6073AG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 400 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225 |
| 封裝： | LEAD FREE, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 84K |
| 代理商： | 2N6073AG |
2N6071A/B Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM;
Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM,
I
RRM
10
2
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3)
(I
TM
=
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100 , T
J
= 40
°
C)
Gate NonTrigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100 , T
J
= 110
°
C)
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current =
6.0 A Peak)
V
TM
V
GT
2
V
V
1.4
2.5
V
GD
0.2
V
1 Adc)
T
J
= 40
°
C
T
J
= 25
°
C
I
H
30
15
mA
Turn-On Time (I
TM
= 14 Adc, I
GT
= 100 mAdc)
t
gt
1.5
s
QUADRANT
(Maximum Value)
Type
I
GT
@
T
J
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 )
2N6071A
2N6073A
2N6075A
+25
°
C
5
5
5
10
40
°
C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25
°
C
3
3
3
5
40
°
C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ V
DRM
, T
J
= 85
°
C, Gate Open, I
TM
= 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
5
V/ s
3. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
*Indicates JEDEC Registered Data.
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
V
EE
V
EE
= 5.0 V
MC7400
4
14
7
+
510
2N6071A
LOAD
115 VAC
60 Hz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6073BG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6075AG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6075BG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6071A | Sensitive Gate Triacs |
| 2N6071B | Sensitive Gate Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6073B | 功能描述:雙向可控硅 THY 4A 400V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6073BG | 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6074 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6074A | 制造商:Motorola Inc 功能描述:Triac, 500v V(drm), 4a I(t)rms, To-126 |
| 2N6074B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|4A I(T)RMS|TO-126 |
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