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參數(shù)資料
| 型號： | 2N6076D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | 2N6076D74Z |
DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
-55 Degrees C to
150 Degrees C
Operating Junction Temperature
150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
625 mW
VOLTAGES & CURRENT
VCEO
Collector to Emitter
25 V
VCBO
Collector to Base
25 V
VEBO
Emitter to Base
5 V
IC
Collector Current
500 mA
1
2
3
B
C
E
1
2
3
LOGO
XYY
2N
6076
0.175 - 0.185
(4.450 - 4.700)
0.500
(12.70)
MIN
0.175 - 0.185
(4.450 - 4.700)
SEATING
PLANE
0.095 - 0.105
(2.413 - 2.667)
0.045 - 0.055
(1.143- 1.397)
0.016 - 0.021
(0.410- 0.533)
0.135 - 0.145
(3.429 - 3.683)
SYM
CHARACTERISTICS
MIN MAX
UNITS
TEST CONDITIONS
BVCBO
Collector to Base Voltage
25
V
IC =
100 uA
BVCEO
Collector to Emitter Voltage
25
V
IC =
10 mA
BVEBO
Emitter to Base Voltage
5
V
IE =
10 uA
ICBO
Collector Cutoff Current
100
nA
VCB =
25 V
10
uA
VCB = 25 V , T=+100°C
ICES
Collector Cutoff Current
100
nA
VCE =
25 V
IEBO
Emitter Cutoff Current
100
uA
VEB =
3.0 V
hFE
DC Current Gain
100
500
VCE = 10 V
IC = 10 mA
VCE(sat)
Collector-Emitter Saturation Voltage
0.25
V
IC
= 10mA
IB =
1.0mA
VBE(sat)
Base-Emitter Saturation Voltage
0.8
V
IC
= 10mA
IB =
1.0mA
VBE(on)
Base -Emitter On Voltage
0.5
1.2
V
VCE = 10 V
IC = 10mA
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
1998 Fairchild Semiconductor Corporation
2n6076.ppt6894 revA
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