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參數(shù)資料
| 型號(hào)： | 2N6107 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | 2N6107 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
2N6107
2N6292
Prelim. 9/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ICEX
ICEO
IEBO
VCEO(sus)*
VCER(sus)*
VCE(sat)*
VBE(on)*
hFE*
hfe
ft
Ccbo
Collector – Cut–Off Current
(VBE = – 1.5V)
Collector – Cut–Off Current
Emitter Cut–Off Current
Collector – Emitter Sustaining Voltage
Collector – Emitter Saturation Voltage
Base – Emitter Voltage
DC Current Gain
Small Signal Current Gain
Transition Frequency
Collector – Base Capacitance
0.1
2
1
70
80
1
3.5
1.5
3
30
150
2.3
20
10
4
250
mA
V
—
MHz
pF
VCE = 80V
TC = 150°C
VCE = 60V
IB = 0
VEB = 5V
IC = 0
IC = 0.1A
RBE = 100W
IC = 3A
IB = 0.3A
IC = 7A
IB = 3A
IC = 3A
VCE = 4A
IC = 7A
IB = 3A
IC = 3A
VCE = 4A
IC = 7A
VCE = 4A
IC = 0.5A
VCE = 4A
f = 50KHz
IC = 0.5A
VCE = 4V NPN
IC = 0.5A
VCE = 4V PNP
VCB = 10V
f = 1MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test tp = 300ms , d =1.5%
For PNP types Voltage and Current Values are Negative.
THERMAL DATA
Parameter
Min.
Typ.
Max.
Unit
Rth-j-case
Thermal resistance Junction-Case
3.12
°C/W
Rth-j-amb
Thermal resistance Junction-ambient
70
°C/W
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|---|---|
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| 2N610716 | 制造商:Harris Corporation 功能描述: |
| 2N6107G | 功能描述:兩極晶體管 - BJT 7A 70V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6107NSC | 制造商:National Semiconductor 功能描述:2N6107 S9G4B |
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