參數(shù)資料
型號(hào)： 2N6107
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 功率晶體管
英文描述： 7 A, 70 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 380K
代理商： 2N6107
2N6107
PNP Silicon
Complementary
Power Transistor
Features
This device is designed for use in general purpose amplifier and
switching applications.
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
70
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
Peak
7.0
10
A
IB
Base Current
3.0
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
40
0.32
W
W/
OC
RJC
Thermal Resistance, Junction to Case
3.125
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Breakdown Voltage
(1)
(IC=100mAdc, IE=0)
70
---
Vdc
ICEO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
---
1.0
mAdc
ICEX
Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=70Vdc, VEB(off)=1.5Vdc, TC=125
OC)
---
100
2.0
uA
mA
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
1.0
mAdc
ON CHARACTERISTICS(1)
hFE
DC Current Gain
(VCE=4.0Vdc, IC=2.0Adc)
(VCE=4.0Vdc, IC=7.0Adc)
30
2.3
150
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=7.0Adc, IB=3.0Adc)
---
3.5
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=7.0Adc, VCE=4.0Vdc)
---
3.0
Vdc
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
INCHES
MM