參數(shù)資料
型號： 2N6255
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 功率晶體管
英文描述： RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
中文描述： VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
封裝： M246, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 231K
代理商： 2N6255
MSC1306.PDF 10-25-99
2N6255
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
Test Conditions
Value
Typ.
Min.
Max.
Unit
BVCES
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE =0Vdc)
36
-
-
Vdc
BVCEO
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
18
-
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
4.0
-
Vdc
ICES
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
-
5.0
mA
ICBO
Emitter Cutoff Current
(VCB = 15 Vdc, IE = 0)
-
-
.25
mA
(on)
HFE
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
5.0
-
-
-
DYNAMIC
Symbol
COB
Test Conditions
Value
Output Capacitance
(VCB = 12.5Vdc, f = 1.0 MHz
-
15
20
pF
FUNCTIONAL
Symbol
Test Conditions
Value
Typ.
Min.
Max.
Unit
G
PE
Power Gain
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
7.8
-
-
dB
η
C
Collector Efficiency
50
-
-
%
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6257 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TO-3 Power Package Transistors (NPN)
2N6258 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon NPN Power Transistors
2N6259 制造商:Microsemi Corporation 功能描述:BJT, NPN, High Power Switching Transistor, IC 16A 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR TO3 制造商:NTE Electronics 功能描述:BIPOLAR, TRANSISTOR, TO3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 250V, 16A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:16A; DC Current Gain hFE:15; No. of Pins:3 ;RoHS Compliant: Yes
2N6259 制造商:NTE Electronics 功能描述:Bipolar Transistor
2N6260 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
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