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參數(shù)資料
| 型號(hào)： | 2N6287 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 214K |
| 代理商： | 2N6287 |
2N6282 thru 2N6284 2N6285 thru 2N6287
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t),
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
ACTIVE–REGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
50
Figure 5. 2N6282, 2N6285
20
2.0
0.05
50
100
TJ = 200°C
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
dc
2.0
5.0
20
5.0 ms
1.0 ms
0.5 ms
10
50
Figure 6. 2N6283, 2N6286
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
50
Figure 7. 2N6284, 2N6287
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
1.0
Figure 8. Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0 10
20
50 100
200
1000
500
100
5000
h
FE
,SMALL–SIGNAL
CURRENT
GAIN
20
200
500
2000
1000
50
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
1000
0.1
Figure 9. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
2.0
5.0
20
100
10
C,
CAP
ACIT
ANCE
(PF)
500
300
200
Cib
Cob
50
0.2
0.5
2N6282/84 (NPN)
2N6285/87 (PNP)
TJ = 25°C
700
2N6282/84 (NPN)
2N6285/87 (PNP)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6282 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6285 | 20 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6286-JQR-B | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6286R1 | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N6286.MODR1 | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6287G | 功能描述:達(dá)林頓晶體管 20A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6287JANTX | 制造商:Aeroflex 功能描述: |
| 2N6288 | 功能描述:兩極晶體管 - BJT NPN Pwr SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6288 LEDFREE | 功能描述:兩極晶體管 - BJT NPN Pwr SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6288G | 功能描述:兩極晶體管 - BJT 7A 30V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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